Description
Toshiba GT50JR22 N-Channel IGBT
The GT50JR22 is a silicon N-channel IGBT designed for soft-switching applications. Toshiba describes it as a fast-switching device with low saturation voltage and built-in diodes.
- Manufacturer: Toshiba
- Device: N-channel IGBT
- Number of circuits: 2
- Collector current absolute maximum: 50A
- Collector-emitter voltage absolute maximum: 600V
- Package: TO-3P(N), three pins, through-hole mounting
The 50A and 600V figures are absolute maximum ratings. They are not recommended operating targets; observe the datasheet conditions, thermal limits and safe operating area when designing a circuit.
